Beilstein J. Nanotechnol.2018,9, 1856–1862, doi:10.3762/bjnano.9.177
transistor (DG-JL TFET) based on a Si1−xGex/Si/Ge heterojunction (HJ) structure is proposed to achieve an improved electrical performance. The effect of introducing the Si1−xGex material at the source side on improving the subthreshold behavior of the DG-JL TFET and on suppressing ambipolarconduction is
, where the optimized design exhibits an improved switching behavior at the nanoscale level. These results make the optimized device suitable for designing digital circuit for high-performance nanoelectronic applications.
Keywords: ambipolarconduction; heterojunctions; junctionless tunneling field
properties, DG TFETs still suffer from other issues mainly related to the relatively low ON-state current and the severe ambipolarconduction, which make it extremely challenging for designing high-performance digital nanocircuits [7][8][9]. Consequently, intensive efforts have been paid to address these
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Figure 1:
Schematic of the investigated DG-HJ-JL TFET with Nd = 1·1019 cm−3 and tox = 3 nm.